2sk2394 no.4839-1/6 applications ? am tuner rf ampli er ? low-noise ampli er features ? large | yfs | ? small ciss ? small-sized package permitting 2sk2394-applied sets to be made small slim ? ultralow noise gure speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dsx 15 v gate-to-drain voltage v gds --15 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7013a-011 ordering number : EN4839b 90512 tkim/22299ts/73094mt (koto) bx-1128 sanyo semiconductors data sheet 2sk2394 http://www.sanyosemi.com/en/network/ product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tb marking electrical connection tb 1 : source 2 : drain 3 : gate sanyo : cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 1 2 3 yj lot no. rank lot no. 2sk2394-6-tb-e 2sk2394-7-tb-e n-channel junction silicon fet low-noise hf ampli er applications
2sk2394 no.4839-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =--10 a, v ds =0v --15 v gate cutoff current i gss v gs =--10v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =5v, i d =100 a --0.3 --0.7 --1.5 v drain current i dss v ds =5v, v gs =0v 6.0* 32.0* ma forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 20 38 ms input capacitance ciss v ds =5v, v gs =0v, f=1mhz 10.0 pf reverse transfer capacitance crss 2.9 pf noise figure nf v ds =5v, r g =1k , i d =1ma, f=1khz 1.0 db * : the 2sk2394 is classi ed by i dss as follows : (unit : ma) rank 5 6 7 i dss 6.0 to 12.0 10.0 to 20.0 16.0 to 32.0 ordering information device package shipping memo 2sk2394-6-tb-e cp 3,000pcs./reel pb free 2sk2394-7-tb-e cp 3,000pcs./reel i d -- v gs i d -- v gs i d -- v ds i d -- v ds drain-to-source voltage, v ds -- v drain-to-source voltage, v ds -- v drain current, i d -- ma drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma gate-to-source voltage, v gs -- v drain current, i d -- ma itr02751 itr02752 0 0 20 16 12 8 4 0.4 0.8 1.2 1.6 2.0 2.4 itr02749 -- 0 . 1 v v gs =0v --0.2v --0.3v --0.4v --0.5v --0.6v --0.7v 0 0 20 16 12 8 4 24681012 -- 0 . 1 v v gs =0v --0.2v --0.3v --0.4v --0.5v --0.6v --0.7v itr02750 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 0 22 20 18 16 14 12 10 8 6 4 2 i dss =20ma 15ma 10ma 6ma --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0.2 0 4 2 6 8 12 10 14 16 75 c v ds =5v i dss =15ma 25 c ta=--25 c v ds =5v
2sk2394 no.4839-3/6 nf -- rg crss -- v ds nf -- f p d -- ta drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf frequency, f -- khz noise figure, nf -- db signal source resistance, rg -- k noise figure, nf -- db ambient temperature, ta -- c allowable power dissipation, p d -- mw ciss -- v ds v gs (off) -- i dss drain current, i dss -- ma cutoff voltage, v gs (off) -- v drain-to-source voltage, v ds -- v input capacitance, ciss -- pf drain current, i d -- ma drain current, i dss -- ma | y fs | -- i d forward transfer admittance, | y fs | -- ms | y fs | -- i dss forward transfer admittance, | y fs | -- ms itr02753 itr02754 10 5 3 7 2 3 5 7 3 1.0 10 7 5235723 5 2 v ds =5v f=1khz i dss =6ma 15ma 30ma v ds =5v v gs =0v f=1khz 35 7 10 23 5 10 2 3 5 7 100 itr02755 itr02756 35 7 10 2 3 57 0.1 2 1.0 7 5 3 2 v ds =5v i d =100 a 7 2 3 5 7 23 1.0 3 1.0 10 10 2 3 5 7 2 v gs =0v f=1mhz itr02759 itr02760 itr02757 itr02758 73 5 10 1.0 2 10 2 357 7 5 3 2 1.0 7 v ds =0v f=1mhz 10 8 6 4 2 0.01 2 0.1 1.0 10 100 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ds =5v i d =1ma rg=1k 10 8 6 4 2 0.1 2 1.0 10 100 1000 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 v ds =5v i d =1ma f=1khz 02040 60 80 100 120 140 160 0 240 200 160 120 80 40
2sk2394 no.4839-4/6 embossed taping speci cation 2sk2394-6-tb-e, 2sk2394-7-tb-e
2sk2394 no.4839-5/6 outline drawing land pattern example 2sk2394-6-tb-e, 2sk2394-7-tb-e mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
2sk2394 ps no.4839-6/6 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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